isc Silicon NPN Power Transistors
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A ·Wide Are...
isc Silicon
NPN Power
Transistors
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB827 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for universal high current switching as solenoid
driving, high speed inverter and converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
14
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1063
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistors
2SD1063
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 5A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Stora...