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2SD1064 Dataheets PDF



Part Number 2SD1064
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD1064 Datasheet2SD1064 Datasheet (PDF)

isc Silicon NPN Power Transistors 2SD1064 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 6A ·Wide Area of Safe Operation ·Complement to Type 2SB828 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers , high-speed inverters, converters,and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO .

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isc Silicon NPN Power Transistors 2SD1064 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 6A ·Wide Area of Safe Operation ·Complement to Type 2SB828 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers , high-speed inverters, converters,and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 17 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SD1064 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC=0 hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 5A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 5A; IB1= IB2= 0.5A RL= 4Ω;PW=20μs; VCC= 20V  hFE-1 Classifications Q R S 70-140 100-200 140-280 MIN TYP. MAX UNIT 50 V 60 V 6 V 0.4 V 100 μA 100 μA 70 280 30 10 MHz 0.1 μs 1.2 μs 0.05 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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