isc Silicon NPN Darlington Power Transistor
2SD1210
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.)@ IC= 10A ·Coll...
isc Silicon
NPN Darlington Power
Transistor
2SD1210
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
1
A
3 W
80
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
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isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A, IB= 25mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A, IB= 25mA
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 10A; VCE= 2V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC = 10A,IB1 = IB2= 25mA; RL= 5Ω;VCC≈ 50V
2SD1210
MIN TYP. MAX UNIT
1.5
V
2.0
V
10
μA
5
mA
1000
1.0
μs
5.0
μs
2.0
μ...