2SD1210

isc Silicon NPN Darlington Power Transistor 2SD1210 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 3 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10A, IB= 25mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A, IB= 25mA ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE DC Current Gain IC= 10A; VCE= 2V Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC = 10A,IB1 = IB2= 25mA; RL= 5Ω;VCC≈ 50V 2SD1210 MIN TYP. MAX UNIT 1.5 V 2.0 V 10 μA 5 mA 1000 1.0 μs 5.0 μs 2.0 μ...