isc Silicon NPN Darlington Power Transistor
2SD1229
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.)@ IC= 5A, VCE= 2V ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min.) ·Complement to Type 2SB912 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers,...
