2SD1265

isc Silicon NPN Power Transistor 2SD1265 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 30 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 3V ICEO Collector Cutoff Current VCE= 20V; IB= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 3V hFE-2 DC Current Gain IC= 1A; VCE= 3V  hFE-1 classifications Q P P 30-60 50-100 80-160 2SD1265 MIN TYP. MAX UNIT 60 V 1.0 V 1.2 V 30 μA 1.0 mA 40 30 160 NOTICE： ISC res...