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2SD1265 Datasheet, Equivalent, NPN Transistor.

NPN Transistor

NPN Transistor

 

 

 

Part 2SD1265
Description NPN Transistor
Feature isc Silicon NPN Power Transistor 2SD126 5 DESCRIPTION ·Low Collector Saturati on Voltage : VCE(sat)= 1.
0V(Max)@ IC= 2 A ·Collector-Emitter Sustaining Voltag e- : VCEO(SUS)= 60V (Min) ·Wide Area o f Safe Operation ·Minimum Lot-to-Lot v ariations for robust device performance and reliable operation APPLICATIONS · Designed for power amplification.
ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto r-Base Voltage 60 V VCEO Collector- Emitter Voltage 60 V VEBO Emitter-B ase Voltage 8 V IC Collector Curren t-Continuous 4 A ICM Collector Curr ent-Peak 6 A IB B .
Manufacture INCHANGE
Datasheet
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Part 2SD1265
Description NPN Transistor
Feature isc Silicon NPN Power Transistor 2SD126 5 DESCRIPTION ·Low Collector Saturati on Voltage : VCE(sat)= 1.
0V(Max)@ IC= 2 A ·Collector-Emitter Sustaining Voltag e- : VCEO(SUS)= 60V (Min) ·Wide Area o f Safe Operation ·Minimum Lot-to-Lot v ariations for robust device performance and reliable operation APPLICATIONS · Designed for power amplification.
ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto r-Base Voltage 60 V VCEO Collector- Emitter Voltage 60 V VEBO Emitter-B ase Voltage 8 V IC Collector Curren t-Continuous 4 A ICM Collector Curr ent-Peak 6 A IB B .
Manufacture INCHANGE
Datasheet
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2SD1265

2SD1265
2SD1265

2SD1265

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