isc Silicon NPN Power Transistor
2SD1266
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.2V(Max)@ IC= 3A ·...
isc Silicon
NPN Power
Transistor
2SD1266
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
5
A
35 W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
2SD1266
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V; f= 10MHz
Switching times
ton
Turn-on Time
tstg...