isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
13
A
65
W
130
℃
Tstg
Storage Temperature Range
-55-130
℃
2SD1291
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isc Silicon
NPN Power
Transistor
2SD1291
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
hFE
DC Current Gain
ICBO
Collector Cutoff Current
VECF
C-E Diode Forward Voltage
IC= 2.5A; VCE= 10V
VCB= 750V; IE= 0 VCB= 1500V; IE= 0
IF= 4A
Switching Times
5
V
5.0
V
1.5
V
4
12
50 μA 1.0 mA
2.2
V
ts
Storage Time
tf
Fall Time
IC= 2.5A; ILeak= 0.8A; LB= 5μH
8
μs
1
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i...
