isc Silicon NPN Darlington Power Transistor
2SD1297
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A, VCE=...
isc Silicon
NPN Darlington Power
Transistor
2SD1297
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
50
A
IB
Base Current- Continuous
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
1.5
A
100 W
3.0
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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isc Silicon
NPN Darlington Power
Transistor
2SD1297
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A ,IB= 30mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A ,IB= 30mA
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE-1
DC Current Gain
IC= 15A ; VCE= 2V
hFE-2
DC Current Gain
IC= 25A ; VCE= 2V
Switching Times
ton
Turn-...
