isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
6
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
16
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1344
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 6A
IC= 5A, IB1= 1A, IB2= 2A; VCC= 200V
2SD1344
MIN TYP. MAX UNIT
1500
V
800
V
7
V
5.0
V
1.5
V
10 μA
40
130 mA
8
2.0
V
0....