2SD1376

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage·Complement to Type 2SB1012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3.0 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1376 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ,IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A ,IB= 1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A ,IB= 1.5mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A ,IB= 1mA VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 1.5A ,IB= 1.5mA VCB= 120V, IE= 0 ICEO Collector Cutoff Current VCE= 100V, RBE= ∞ hFE DC Current Gain IC= 1...