isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current -IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector Current -IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB1009 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1380
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isc Silicon
NPN Power
Transistor
2SD1380
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 3V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
40
V
32
V
5
V
0.8
V
1
μA
1
μA
82
390
100
MHz
30
...
