isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector...
