isc Silicon NPN Power Transistor
2SD1406
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min) ·Complement to Type 2SB1015 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applicatio...
