2SD1413

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V ·Complement to Type 2SB1023 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Hammer driver,pulse motor driver applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1413 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1413 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 4mA 2.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 20 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.5 mA hFE -1 DC Current Gain IC= 1A; VCE= 2V 2000 hFE -2 DC Current Gain IC= 3A; VCE...