2SD1441

isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICP Collector Current-Peak 15 A IBP Base Current-Peak Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3.5 A 2.5 W 70 130 ℃ Tstg Storage Temperature Range -55~130 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= 3A; IB= 1A VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 3A; VCE= 10V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V VECF C-E Diode Forward Voltage IF= 4A ts Storage Time tf Fall Time IC= 3A, IBend= 1A, Lleak= 5μH 2SD1441 MIN TYP. MAX UNIT 5 V 1.0 V 1.5 V 50 μA 1.0 mA 5 15 2 MHz 2.2 V 9.0 μs 0.75...