2SD1455

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1455 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.2A ICES Collector Cutoff Current VCE= 1500V; RBE= ∞ hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A 2SD1455 MIN TYP. MAX UNIT 6 V 5.0 V 1.5 V 0.5 mA 8 2.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products ar...