2SD1457

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 2A, VCE= 2V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 3 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1457 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, L= 10mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ,IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A , IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A , IB= 60mA ICBO Collector Cutoff current VCB= 200V, IE= 0 hFE DC Current Gain IC= 2A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V  hFE Classifications Q P O 700-2500 2000-5000 4000-10000 2SD1457 MIN TYP. MAX UNIT 150 V 5 V 1.5 V 2.5 V 0.1 mA 700 10000 15 MHz NOTICE： IS...