2SD1459

isc Silicon NPN Power Transistor 2SD1459 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1037 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 30 W 2 175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.3A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V  hFE Classifications Q R 70-140 100-200 2SD1459 MIN TYP. MAX UNIT 150 V 1.5 V 1.2 V 10 μA 10 μA 70 200 8 MHz NOTICE： ISC reserves the rights to make cha...