isc Silicon NPN Power Transistor
2SD1486
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@IC= 4A ·...
isc Silicon
NPN Power
Transistor
2SD1486
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB1055 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
3 W
70
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
2SD1486
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
hFE-3
DC Current Gain
IC= 4A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
2.0
V
1.8
V
50 μA
50 μA
20
40
200
20
230
pF
20
MHz
hFE-2 Classifications
...