isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min) ·Wide Area of...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1085 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
3
A
20 W
1.5
150
Tstg
Storage Temperature Range
-55~150 ℃
2SD1562
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isc Silicon
NPN Power
Transistor
2SD1562
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
hF...