2SD1565

isc Silicon NPN Darlington Power Transistor 2SD1565 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.5 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1565 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 2mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE-1 DC Current Gain IC= 2A; VCE= 2V 2000 20000 hFE-2 DC Current Gain IC= 4A; VCE= 2V 500 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 60 pF fT Current-Gain—Bandwidth Product ...