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NPN Transistor. 2SD1577 Datasheet

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NPN Transistor. 2SD1577 Datasheet






2SD1577 Transistor. Datasheet pdf. Equivalent




2SD1577 Transistor. Datasheet pdf. Equivalent





Part

2SD1577

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·H igh Reliability ·Wide Area of Safe Ope ration ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Designed for horizontal output applications ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .
Manufacture

INCHANGE

Datasheet
Download 2SD1577 Datasheet


INCHANGE 2SD1577

2SD1577; VCBO Collector-Base Voltage 1300 V V CES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V I C Collector Current- Continuous 5 A ICP Collector Current-Peak 17 A IB P Base Current-Peak 3.5 A IBP Reve rse Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Pow er Dissipation @ TC=.


INCHANGE 2SD1577

25℃ TJ Junction Temperature 2.5 A 3 W 80 150 ℃ Tstg Storage Temper ature Range -55~150 ℃ 2SD1577 isc website:www.iscsemi.com 1 isc & isc semi is registered trademark isc Silic on NPN Power Transistor 2SD1577 ELECT RICAL CHARACTERISTICS TC=25℃ unless o therwise specified SYMBOL PARAMETER V(BR)EBO Emitter-Base Breakdown Voltage CONDITIONS IE= 1mA ; IC= 0.


INCHANGE 2SD1577

MIN TYP. MAX UNI T 6 V VCE(sat) C ollector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 2.0 V VBE(sat) Base-Emi tter Saturation Voltage IC= 4.5A; IB= 2A 1.3 V ICBO Collector Cutoff Curre nt VCB= 750V ; IE= 0 VCB= 1300V ; IE= 0 50 μA 1.0 mA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 1.0 mA hFE DC Current Gain IC= 4A ; VCE= 10V 4 15 fT Current-Gai.

Part

2SD1577

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·H igh Reliability ·Wide Area of Safe Ope ration ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Designed for horizontal output applications ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .
Manufacture

INCHANGE

Datasheet
Download 2SD1577 Datasheet




 2SD1577
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1300V (Min)
·High Switching Speed
·High Reliability
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1300
V
VCES
Collector-Emitter Voltage
1300
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Peak
17
A
IBP
Base Current-Peak
3.5
A
IBP
Reverse Base Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2.5
A
3
W
80
150
Tstg
Storage Temperature Range
-55~150
2SD1577
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SD1577
isc Silicon NPN Power Transistor
2SD1577
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)EBO Emitter-Base Breakdown Voltage
CONDITIONS
IE= 1mA ; IC= 0
MIN
TYP. MAX
UNI
T
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A
2.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2A
1.3 V
ICBO
Collector Cutoff Current
VCB= 750V ; IE= 0
VCB= 1300V ; IE= 0
50 μA
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 6V ; IC= 0
1.0 mA
hFE
DC Current Gain
IC= 4A ; VCE= 10V
4
15
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V, ftest= 0.5MHz
2
MHz
Switching times
tstg
Storage Time
tf
Fall Time
IC= 4A , IB1(end)= 1.5A ; LB= 10μH
11 μs
1.0 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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