2SD1577

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 17 A IBP Base Current-Peak 3.5 A IBP Reverse Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 3 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1577 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1577 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)EBO Emitter-Base Breakdown Voltage CONDITIONS IE= 1mA ; IC= 0 MIN TYP. MAX UNI T 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.3 V ICBO Collector Cutoff Current VCB= 750V ; IE= 0 VCB= 1300V ; IE= 0 50 μA 1.0 mA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 1.0 mA hFE DC Current Gain IC= 4A ; VCE= 10V 4 15 fT Current-Gain—Bandwidth Product ...