2SD1594

isc Silicon NPN Power Transistor DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1594 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1594 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB1= 0.5A, L= 1mH VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 100V;IE= 0 ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 100V;RBE= 51Ω@TC= 125℃ VCE=100V;VBE(off)= 1.5V VCE=100V;VBE(off)=1.5V@TC= 125℃ VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V hFE-2 DC Current Gain IC= 3A ...