isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 30A ·High DC Current Gain-
: hFE= 1000(...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= 30A ·High DC Current Gain-
: hFE= 1000(Min)@ IC= 15A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1597
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;IB=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ;IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 30A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 30A; IB= 0.1A
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
ICBO
Collector Cutoff Current
VCB= 120V;IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE
DC Current Gain
IC= 15A ; VCE= 2V
2SD1597
MIN TYP. MAX UNIT
120
V
7
V
2.0
V
2.5
V
1.0
mA
10
μA
5
mA
1000
NOTICE： ISC reserves...
