2SD1632

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 15 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 70 W 130 ℃ Tstg Storage Temperature Range -55~130 ℃ 2SD1632 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1632 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= 3A; IB= 1A VCB= 750V; IE= 0 VCB= 1300V; IE= 0 IC= 3A; VCE= 10V VECF C-E Diode Forward Voltage IF= 4A Switching times tstg Storage Time tf Fall Time IC= 3A; IB(end)= 1A; Lleak= 5μH MIN TYP. MAX UNIT 5 V 1.0 V 1.5 V 50 μA 1.0 mA 5 15 2.2 V 9.0 μs 0.8 μs NOTICE： ISC reserves the rights to make changes of the content here...