2SD1680

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCES Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse ICP Collector Current-Pulse (unrepetitive) PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 15 A 70 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1680 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1680 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A; IB= 0.5A VCE= 330V; VBE= 0; VCE= 300V; VBE= 0; Ta= 100℃ VEB= 6V; IC= 0 1.0 V 1.2 V 0.1 1.0 mA 1.0 mA hFE DC Current Gain IC= 5A; VCE= 4V 15 45 tf Fall Time IC= 5A; IB1= 0.8A; VEB= -5V, RB=0.5Ω 0.75 μs NOTICE： ISC reserves the rights ...