isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage
: VCE(sa...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage
: VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type 2SB1151 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid
or motor.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Pulse
8
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
1
A
20 W
1.3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1691
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 1V
hFE-2
DC Current Gain
IC= 2A; VCE= 1V
hFE-3
DC Current Gain
IC= 5A; VCE= 1V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A, IB1= IB2= 0.2A; RL= 5Ω; VCC≈ 10V
hFE-2 Classifications
M
L
K
100-200 1...
