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2SD1705

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SD1705 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6A ·Complement to Type 2SB1154 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching ap...

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