2SD1707

isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A ·Complement to Type 2SB1156 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 30 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1707 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-1 Base -Emitter Saturation Voltage IC= 8A; IB= 0.4A VBE(sat)-2 Base -Emitter Saturation Voltage IC= 20A; IB= 2A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V hF...