isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum ...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1300
V
VCES
Collector-Emitter Voltage
1300
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICP
Collector Current-Peak
18
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2.5
A
100
W
150
℃
Tstg
Storage Temperature Range
-55-150 ℃
2SD1739
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
hFE
DC Current Gain
IC= 1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0 VCB= 1300V; IE= 0
fT
Transition Frequency
IC= 1A; VCE= 10V
Switching Times, Resistive Load
ts
Storage Time
tf
Fall Time
IC= 5A; IB1= 1A; IB2= 2A, VCC= 200V
2SD1739
MIN TYP MAX UNIT
7
V
8.0
V
1.5
V
6
30
10 μA
1.0 mA
2
MHz
1.5
μs
0.2
μs
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