2SD1826

isc Silicon NPN Darlington Power Transistor 2SD1826 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 3.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1224 APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 7mA VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 7mA ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3.5A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 3.5A; VCE= 5V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A, IB1= -IB2= 6mA, VCC= 20V; RL= 6.7Ω ...