2SD1829

isc Silicon NPN Darlington Power Transistor 2SD1829 DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= 3V, IC= 2.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1227 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1829 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 5mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2.5A; VCE= 3V fT Current-Gain—Bandwidth Product IC= 2.5A; VCE= 5V Switching Times ton ...