isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High R...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
20
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1884
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
tf
Fall Time
IC= 4A ; VCE= 5V
IC= 4A , IB1= 0.8A ; IB2= -1.6A PW=20μs; Duty Cycle≤1%
2SD1884
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10 μA
1.0 mA
1.0 mA
8
5
10
0.3 μs
NOTICE: IS...