2SD1885C

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 65 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1885C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain tf Fall Time IC= 5A ; VCE= 5V IC= 3A , IB1= 0.6A ; IB2= -1.2A PW=20μs; Duty Cycle≤1% 2SD1885C MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 1.0 mA 1.0 mA 10 5 8 0.3 μs NOTICE： ISC re...