isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= 7A ·Low-Collector S...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= 7A ·Low-Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max.)@IC= 7A ·Complement to Type 2SB1255 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
15
A
100 W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1895
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
2SD1895
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter Voltage
Breakdown IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 7mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 7mA
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
ICEO
Collector Cutoff Current
VCE= 140V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 7A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
Switching Times
ton
Turn-on Time
tstg
Stor...