2SD1899-K

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SB1261-K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1899-K isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 100μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE1 DC Current Gain IC= 0.2A; VCE= 2V hFE DC Current Gain IC= 0.6A; VCE= 2V hFE DC Current Gain IC= 2A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwid...