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2SD1933

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor 2SD1933 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1342 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLU...

INCHANGE

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