Document
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage-
: VCE(sat)= 1.2V(Max,)@ IC= 3A ·Complement to Type 2SB1393 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
2 W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1985
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SD1985
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
60
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A
1.2
V
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
1.8
V
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
200 μA
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
300 μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
70
250
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
10
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5 V; f= 1MHz
30
MHz
Switching Times
ton
Turn-on Time
0.5
μs
tstg
Storage Time
VCC= 50V, IC= 1A; IB1= IB2= 0.1A,
2.5
μs
tf
Fall Time
0.4
μs
hFE-1 Classifications
Q
P
70-150 120-250
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
.