2SD2016

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter, relay and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2016 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1.5mA ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.1A; VCE= 12V COB Output Capacitance VCB= 10V, ftest= 1MHz 2SD2016 MIN TYP. MAX UNIT 200 V 1.5 V 2.0 V 10 μA 10 mA 1000 15000 ...