isc Silicon NPN Darlington Power Transistor
2SD2024
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V...
isc Silicon
NPN Darlington Power
Transistor
2SD2024
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
10
A
2 W
40
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
2SD2024
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 100μA; IE= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3
mA
hFE
DC Current Gain
IC= 2A; VCE= 3V
1000
20000
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
50
pF
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= 5V; ftest= 10MHz
40
MHz
NOTICE: ISC r...