isc Silicon NPN Power Transistor
2SD2047
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Speed Switchin...
isc Silicon
NPN Power
Transistor
2SD2047
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Pulse
10
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.55 ℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2.0A
ICBO
Collector Cutoff Current
VCB= 750V ; IE= 0 VCB= 1500V ; IE= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
2SD2047
MIN TYP. MAX UNIT
700
V
1500
V
10
V
...