isc Silicon NPN Power Transistor
DESCRIPTION ·High Current-Gain Bandwidth Product ·Good Linearity of hFE ·Wide Area of S...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Current-Gain Bandwidth Product ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1361 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplification, optimum for the
output stage of a HiFi audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
9
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
15
A
3 W
100
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD2052
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isc Silicon
NPN Power
Transistor
2SD2052
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A
2.0
V
VBE(on) Base-Emitter On Voltage
IC= 7A ; VCE= 5V
1.8
V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
50 μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
50 μA
hFE-1
DC Current Gain
IC= 20mA ; VCE= 5V
20
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
60
200
hFE-3
DC Current Gain
IC= 7A ; VCE= 5V
20
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 5V, ftest= 1.0MHz
20
MHz
COB
Output Capacitan...
