2SD2057

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage, High Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCBO Collector-Base Voltage 1500 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2057 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2057 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1500V; IE= 0 30 μA 300 hFE DC Current Gain IC= 5A; VCE= 10V 4.5 15 VECF C-E Diode Forward Voltage IF= 6A 2.3 V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 2 MHz Switching times tstg Storage Time tf Fall Time IC= 5A, IB1= IB1= 1.2...