2SD2065

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1372 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12 A 80 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2065 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2065 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base -Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain IC= 5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5 V; f= 1MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz MIN TYP. MAX UNIT 2.0 V 1.8 V 50 μA 50 μA 20 60 200 20 20 MHz 110 pF  h...