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2SD2082 Dataheets PDF



Part Number 2SD2082
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD2082 Datasheet2SD2082 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 8A, IB= 16mA) ·Complement to Type 2SB1382 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for chopper regulator, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.

  2SD2082   2SD2082


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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 8A, IB= 16mA) ·Complement to Type 2SB1382 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for chopper regulator, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 26 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 75 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2082 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2082 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 16mA VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 16mA ICBO Collector Cutoff Current VCB= 120V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 8A ; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product Switching Times IE= -1A ; VCE= 12V ton Turn-on Time tstg Storage Time tf Fall Time VCC= 40V, RL= 5Ω, IC= 8A; IB1= IB2= 16mA, MIN TYP. MAX UNIT 120 V 1.5 V 2.5 V 10 μA 10 mA 2000 210 pF 20 MHz 0.6 μs 7.0 μs 1.5 μs Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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