isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Complement to Type 2SB1383 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for driver of solenoid, motor and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
40
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD2083
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isc Silicon
NPN Darlington Power
Transistor
2SD2083
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ,IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA
1.8
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A ,IB= 24mA
2.5
V
ICBO
Collector Cutoff current
VCB= 120V, IE= 0
10 μA
IEBO
Emitter Cutoff current
VEB= 6V, IC= 0
10 mA
hFE
DC Current Gain
IC= 12A ; VCE= 4V
2000
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
340
pF
fT
Current-Gain—Bandwidt...
