I
isc Silicon NPN Darlington Power Transistor
2SD2104
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 12...
I
isc Silicon
NPN Darlington Power
Transistor
2SD2104
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain
: hFE= 1000(Min) @ IC= 4A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
12
A
25 W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB= 8mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A; IB= 80mA
ICBO
Collector Cutoff Cur...