2SD2300

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for CTV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A IC(peak) Collector Current-Peak 6 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2300 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.2A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 6A tf Fall Time IC= 4A; IB1= 0.8A; IB2≈ -1.5A 2SD2300 MIN TYP. MAX UNIT 6 V 5.0 V 1.5 V 0.5 mA 20 3.0 V 1.0 μs Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time witho...