2SD2374A

\ isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max)@ (IC= 3A, IB= 0.375A) ·Complement to Type 2SB1548A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 5 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2374A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2374A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A 1.2 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= 80V; VBE= 0 200 μA ICEO Collector Cutoff Current VCE= 60V; IB= 0 300 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 70 250 hFE-2 DC Current Gain IC= 3A; VCE= 4V...