2SD2395

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2A ·Wide Area of Safe Operation ·Complement to Type 2SB1566 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4.5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2395 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2395 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 50 V V(BR CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 60 V V(BR EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1 μA hFE DC Current Gain IC= 0.5A ; VCE= 5V 100 320 fT Current-...